Download EUV Sources for Lithography (SPIE Press Monograph Vol. by Vivek Bakshi (Editor) PDF

By Vivek Bakshi (Editor)

This finished quantity, edited by way of a senior technical employees member at SEMATECH, is the authoritative reference publication on EUV resource expertise. the quantity includes 38 chapters contributed by way of prime researchers and providers within the EUV resource box. subject matters diversity from a cutting-edge evaluation and in-depth clarification of EUV resource requisites, to basic atomic info and theoretical types of EUV resources in keeping with discharge-produced plasmas (DPPs) and laser-produced plasmas (LPPs), to an outline of admired DPP and LPP designs and different applied sciences for generating EUV radiation. extra subject matters comprise EUV resource metrology and parts (collectors, electrodes), particles mitigation, and mechanisms of part erosion in EUV assets. the amount is meant to satisfy the desires of either practitioners of the expertise and readers looking an advent to the topic. Contents - Preface - creation - checklist of participants - checklist of Abbreviations - advent and expertise evaluation - basics and Modeling - Plasma Pinch resources - Laser-Produced Plasma (LPP) resources - EUV resource Metrology - different forms of EUV resources - EUV resource parts - Index

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Recently, however,72 they have clarified this requirement to say that the lifetime of critical components will be decided by the CoO. This means that if collectors and electrodes can be costeffectively replaced with an acceptable component cost, down time, and requalification time, the lifetime of the source components can be lower. 1) sets the lifetime of an alpha tool operating at 2 kHz at 1 month or 10 billion pulses, of a beta tool operating at 5 kHz at 3 months or 10 billion pulses, and of a production tool at 12 months or 80 billion pulses.

References 1. International Technology Roadmap for Semiconductors (ITRS). org. 2. See Chapter 2 of this volume. 3. V. Bakshi, EUV Source Technology Status, IEUVI Source TWG, San Francisco, CA, private communication (2004). 4. S. A. van der Westen, C. Bruineman, F. Bijkerk, and V. Bakshi, “Flying Circus 2 (FC2): Calibration of an extreme ultraviolet (EUV) source at PLEX LLC,” ISMT Technology Transfer Report 04024490A-TR (2004). org. 5. A. Hassanein, V. Sizyuk, V. , “Simulation of DPP/LPP hydrodynamics and radiation transport for EUV lithography,” EUVL Symposium, Miyazaki, Japan (November 2005).

5 nm. However, most measurements are now performed by directly observing the EUV source. Consequently, the power estimated at the IF requires the estimation of losses between the source and IF. 33–35 Since measurements at IF are more cumbersome and IF metrology equipment is more expensive, power measurements are likely to continue to be taken directly at source. Absolute EUV power is measured using one or more multilayer mirrors and EUV diodes, although absolutely calibrated charge-coupled devices (CCDs) combined with spectrometers can also perform these measurements.

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